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Silicon Carbide mSiC™ Gate Drivers

Silicon Carbide (SiC) and IGBT Gate Driver Solutions


Our configurable mSiC™ gate drivers reduce switching losses and improve system power density, providing a superior solution compared to standard analog MOSFET drivers. Incorporating patented Augmented Switching™ technology and robust short-circuit protection, these digital gate drivers are fully software configurable and prevent false faults and mitigate ringing, Electromagnetic Interference (EMI), overshoot and undershoot in SiC and IGBT power modules. Our fully configurable mSiC gate drivers boost the efficiency and performance of SiC and IGBT power modules by using configurable switching profiles to optimize switching efficiency and device characteristics to meet application requirements.

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