mSiC™ Schottky Barrier Diodes (SBDs) leverage silicon carbide wide bandgap (WBG) technology to offer unrivaled ruggedness and performance. Our mSiC diodes range from 700V to 3.3 kV in a variety of topologies to give you flexible options for increasing the power density and reliability in your system design. mSiC diodes enable you to create high-voltage power applications with a smaller footprint, lower weight and reduced cost.
{"SalesForceSecurePath":"https://microchip--mcuat.sandbox.my.salesforce-scrt.com","EmbeddedServiceName":"Messaging_For_Microchip_New","SalesForcePath":"https://microchip--mcuat.sandbox.my.site.com/ESWMessagingForMicrochi1771925121712","AgentAvailableHeader":"No problem. Chat with our engineering experts or schedule a call that's convenient for you.","ScheduleCallUrl":"https://microchip.my.site.com/schedulemeetingportal/s/","SalesforceOrgId":"00DWD00000Bjesb","JsUrl":"https://microchip--mcuat.sandbox.my.site.com/ESWMessagingForMicrochi1771925121712/assets/js/bootstrap.min.js"}
