High-Performance Discrete IGBTs for Efficient Power Switching Applications
Our advanced Insulated Gate Bipolar Transistors (IGBTs) solutions combine the high-efficiency power switching capabilities of MOSFETs with the high-voltage handling of Bipolar Junction Transistors (BJTs), which makes them an excellent choice for demanding applications such as motor drives, renewable energy inverters and industrial power supplies. Our comprehensive IGBT portfolio delivers robust performance, superior reliability and optimized energy efficiency across a wide range of voltage and current ratings. Whether you need low switching loss, rugged design or scalable solutions, our discrete IGBTs help you achieve maximum system performance and reliability in today’s power electronics designs.
Our versatile range of discrete IGBT solutions meets the demanding requirements of high-voltage and high-power applications across industries. Our portfolio includes the Power MOS 7, Power MOS 8™ and Field-Stop Trench Gate technologies, with distinct technologies and performance characteristics to address specific application needs.
Discrete IGBTs
Power MOS 7
Punch-Through (PT)
Available in 600V, 900V and 1,200V ratings
Ultra-low gate charge
Power MOS 8
PT and Non-Punch-Through (NPT) options
Available in 600V, 650V, 900V and 1200V ratings
Lower conduction loss for high-efficiency applications
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