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Overview
The EV84k75A discrete gate driver evaluation board is designed to facilitate the evaluation of Silicon Carbide (SiC) MOSFET devices, offering superior performance in medium-power and high-frequency applications. This board features a 2W isolated power supply for driving MOSFETs, enhanced EMI immunity through a common-mode choke, and the capability to drive 700V and 1200V mSiC™ MOSFETs with a 5A peak output current. It supports seamless microcontroller interfacing with +3.3V / +5V CMOS/TTL logic on PWM pins, independent under-voltage lockout (UVLO) for safety, and allows for optimized switching with separate gate resistors, making it a comprehensive tool for evaluating and optimizing SiC device performance.
Electrical Characteristics
- Input Supply Voltage: 13.6V to 16.5V (Typical: 15V)
- Default Output Voltage (VGS): +20V / -5V
- Alternative Output Voltage Configurations: +18V / -5V, +15V / -3V
- Working Isolation Voltage: 3000V
- Output Gate Resistor (RG): 0.5 ohm
Maximum Parameters
- Input Supply Voltage (VIN): 15V
- Output Peak Current (IPK): ±5A
- Output Power per Channel (PDRIVE): 2W
- Maximum Switching Frequency (FMAX): 200 kHz
- Ambient Operating Temperature (TA): -40 to 85 °C
Applications
- DC-DC converters
- Uninterruptible power supplies (UPS)
- Industrial motor drives and solar inverters
- Hybrid Electric Vehicle (HEV) or Electric Vehicle (EV)
- Induction welding, cutting and heating
- Frequency conversion
Explore Complementary Solutions
- The 2W isolated power supply enables driving MOSFETs at higher frequencies
- Designed to drive 700V and 1200V mSiC™ MOSFETs with a 5A peak source and sink output current
- Separate gate turn-on and turn-off resistors allow users to optimize switching turn-on and turn-off slopes
- Enhanced electromagnetic interference (EMI) immunity
1x Single-Channel Discrete MOSFET Gate Driver Evaluation Board
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Documentation
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| Single-Channel Discrete Gate Driver (SCDGD) Evaluation Board Design-Files | Other Board Design Files | Download |
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